IGA03N120H2

IGA03N120H2 Infineon Technologies


INFNS13159-1.pdf?t.download=true&u=5oefqw Виробник: Infineon Technologies
Description: IGA03N120 - DISCRETE IGBT WITHOU
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO220-3-31
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 140µJ (on), 150µJ (off)
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 8.6 nC
Part Status: Active
Current - Collector (Ic) (Max): 8.2 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 29 W
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Технічний опис IGA03N120H2 Infineon Technologies

Description: IGA03N120 - DISCRETE IGBT WITHOU, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A, Supplier Device Package: PG-TO220-3-31, Td (on/off) @ 25°C: 9.2ns/281ns, Switching Energy: 140µJ (on), 150µJ (off), Test Condition: 800V, 3A, 82Ohm, 15V, Gate Charge: 8.6 nC, Part Status: Active, Current - Collector (Ic) (Max): 8.2 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 9 A, Power - Max: 29 W.

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IGA03N120H2 IGA03N120H2 Виробник : Infineon Technologies Infineon_IGA03N120H2_DS_v02_02_EN-3163555.pdf IGBT Transistors HIGH SPEED TECH 1200V 3A
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