Технічний опис IGB03N120H2ATMA1 Infineon Technologies
Description: IGBT 1200V 9.6A 62.5W TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A, Supplier Device Package: PG-TO263-3-2, Td (on/off) @ 25°C: 9.2ns/281ns, Switching Energy: 290µJ, Test Condition: 800V, 3A, 82Ohm, 15V, Gate Charge: 22 nC, Part Status: Last Time Buy, Current - Collector (Ic) (Max): 9.6 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 9.9 A, Power - Max: 62.5 W.
Інші пропозиції IGB03N120H2ATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IGB03N120H2ATMA1 | Виробник : INFINEON TECHNOLOGIES |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 3.9A; 62.5W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 3.9A Power dissipation: 62.5W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 9.9A Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Turn-on time: 16.1ns Turn-off time: 403ns кількість в упаковці: 1000 шт |
товар відсутній |
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IGB03N120H2ATMA1 | Виробник : Infineon Technologies |
Description: IGBT 1200V 9.6A 62.5W TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A Supplier Device Package: PG-TO263-3-2 Td (on/off) @ 25°C: 9.2ns/281ns Switching Energy: 290µJ Test Condition: 800V, 3A, 82Ohm, 15V Gate Charge: 22 nC Part Status: Last Time Buy Current - Collector (Ic) (Max): 9.6 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 9.9 A Power - Max: 62.5 W |
товар відсутній |
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IGB03N120H2ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 3.9A; 62.5W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 3.9A Power dissipation: 62.5W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 9.9A Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Turn-on time: 16.1ns Turn-off time: 403ns |
товар відсутній |