IGP03N120H2XKSA1

IGP03N120H2XKSA1 Infineon Technologies


igp_w03n120h2_rev2_6.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 1200V 9.6A 62500mW 3-Pin(3+Tab) TO-220 Tube
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Технічний опис IGP03N120H2XKSA1 Infineon Technologies

Description: IGBT 1200V 9.6A 62.5W TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A, Supplier Device Package: PG-TO220-3-1, Td (on/off) @ 25°C: 9.2ns/281ns, Switching Energy: 290µJ, Test Condition: 800V, 3A, 82Ohm, 15V, Gate Charge: 22 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 9.6 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 9.9 A, Power - Max: 62.5 W.

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IGP03N120H2XKSA1 IGP03N120H2XKSA1 Виробник : Infineon Technologies IGx03N120H2.pdf Description: IGBT 1200V 9.6A 62.5W TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO220-3-1
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 290µJ
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
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IGP03N120H2XKSA1 Виробник : Infineon Technologies IGx03N120H2.pdf IGBT Transistors IGBT PRODUCTS
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