Технічний опис IGW03N120H2FKSA1 Infineon Technologies
Description: IGBT 1200V 9.6A 62.5W TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A, Supplier Device Package: PG-TO247-3-1, Td (on/off) @ 25°C: 9.2ns/281ns, Switching Energy: 290µJ, Test Condition: 800V, 3A, 82Ohm, 15V, Gate Charge: 22 nC, Part Status: Last Time Buy, Current - Collector (Ic) (Max): 9.6 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 9.9 A, Power - Max: 62.5 W.
Інші пропозиції IGW03N120H2FKSA1
Фото | Назва | Виробник | Інформація |
Доступність |
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IGW03N120H2FKSA1 | Виробник : Infineon Technologies |
Description: IGBT 1200V 9.6A 62.5W TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A Supplier Device Package: PG-TO247-3-1 Td (on/off) @ 25°C: 9.2ns/281ns Switching Energy: 290µJ Test Condition: 800V, 3A, 82Ohm, 15V Gate Charge: 22 nC Part Status: Last Time Buy Current - Collector (Ic) (Max): 9.6 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 9.9 A Power - Max: 62.5 W |
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IGW03N120H2FKSA1 | Виробник : Infineon Technologies | IGBT Transistors INDUSTRY 14 |
товар відсутній |