IKB03N120H2ATMA1

IKB03N120H2ATMA1 Infineon Technologies


4926ikb03n120h2_rev2_5g.pdffolderiddb3a304412b407950112b408e8c90004fi.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 1200V 9.6A 62500mW 3-Pin(2+Tab) D2PAK T/R
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис IKB03N120H2ATMA1 Infineon Technologies

Description: IGBT 1200V 9.6A 62.5W TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 42 ns, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A, Supplier Device Package: PG-TO263-3-2, Td (on/off) @ 25°C: 9.2ns/281ns, Switching Energy: 290µJ, Test Condition: 800V, 3A, 82Ohm, 15V, Gate Charge: 22 nC, Part Status: Last Time Buy, Current - Collector (Ic) (Max): 9.6 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 9.9 A, Power - Max: 62.5 W.

Інші пропозиції IKB03N120H2ATMA1

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
IKB03N120H2ATMA1 IKB03N120H2ATMA1 Виробник : Infineon Technologies IKB03N120H2_Rev2_3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42854753dcf Description: IGBT 1200V 9.6A 62.5W TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO263-3-2
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 290µJ
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
товар відсутній