IKD04N60RFAATMA1

IKD04N60RFAATMA1 Infineon Technologies


dgdlfolderid5546d4624c9e0f0e014c9e8d59de15defileid5546d4624a56eed.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 600V 8A 75000mW Automotive 3-Pin(2+Tab) DPAK T/R
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Технічний опис IKD04N60RFAATMA1 Infineon Technologies

Description: IGBT 600V 8A 75W TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 34 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A, Supplier Device Package: PG-TO252-3, IGBT Type: Trench, Td (on/off) @ 25°C: 12ns/116ns, Switching Energy: 60µJ (on), 50µJ (off), Test Condition: 400V, 4A, 43Ohm, 15V, Gate Charge: 27 nC, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 12 A, Power - Max: 75 W, Grade: Automotive, Qualification: AEC-Q101.

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IKD04N60RFAATMA1 IKD04N60RFAATMA1 Виробник : Infineon Technologies IKD04N60RFA.pdf Description: IGBT 600V 8A 75W TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 12ns/116ns
Switching Energy: 60µJ (on), 50µJ (off)
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
Grade: Automotive
Qualification: AEC-Q101
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IKD04N60RFAATMA1 IKD04N60RFAATMA1 Виробник : Infineon Technologies IKD04N60RFA.pdf IGBT Transistors IGBT PRODUCTS
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