IKD10N60RFAATMA1 Infineon Technologies
Виробник: Infineon TechnologiesTrans IGBT Chip N-CH 600V 20A 150000mW Automotive 3-Pin(2+Tab) DPAK T/R
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Технічний опис IKD10N60RFAATMA1 Infineon Technologies
Description: IGBT 600V 20A 150W PG-TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 72 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A, Supplier Device Package: PG-TO252-3, IGBT Type: Trench, Td (on/off) @ 25°C: 12ns/168ns, Switching Energy: 190µJ (on), 160µJ (off), Test Condition: 400V, 10A, 26Ohm, 15V, Gate Charge: 64 nC, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 30 A, Power - Max: 150 W, Grade: Automotive, Qualification: AEC-Q101.
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IKD10N60RFAATMA1 | Виробник : Infineon Technologies |
Description: IGBT 600V 20A 150W PG-TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 72 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Td (on/off) @ 25°C: 12ns/168ns Switching Energy: 190µJ (on), 160µJ (off) Test Condition: 400V, 10A, 26Ohm, 15V Gate Charge: 64 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 150 W Grade: Automotive Qualification: AEC-Q101 |
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