Технічний опис IKW03N120H2 INF
Description: IGBT WITH ANTI-PARALLEL DIODE, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 42 ns, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A, Supplier Device Package: PG-TO247-3-1, Td (on/off) @ 25°C: 9.2ns/281ns, Switching Energy: 290µJ, Test Condition: 800V, 3A, 82Ohm, 15V, Gate Charge: 22 nC, Part Status: Active, Current - Collector (Ic) (Max): 9.6 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 9.9 A, Power - Max: 62.5 W.
Інші пропозиції IKW03N120H2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IKW03N120H2 | Виробник : INF |
 07+; |
на замовлення 3145 шт: термін постачання 14-28 дні (днів) |
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IKW03N120H2 | Виробник : Infineon Technologies |
Trans IGBT Chip N-CH 1200V 9.6A 62500mW Automotive 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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IKW03N120H2 | Виробник : Infineon Technologies |
Description: IGBT WITH ANTI-PARALLEL DIODE Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A Supplier Device Package: PG-TO247-3-1 Td (on/off) @ 25°C: 9.2ns/281ns Switching Energy: 290µJ Test Condition: 800V, 3A, 82Ohm, 15V Gate Charge: 22 nC Part Status: Active Current - Collector (Ic) (Max): 9.6 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 9.9 A Power - Max: 62.5 W |
товар відсутній |
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IKW03N120H2 | Виробник : Infineon Technologies |
IGBT Transistors HIGH SPEED 2 TECH 1200V 3A |
товар відсутній |