на замовлення 1123 шт:
термін постачання 227-236 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 436.31 грн |
| 10+ | 361.32 грн |
| 25+ | 296.26 грн |
| 100+ | 253.75 грн |
| 250+ | 240.46 грн |
| 500+ | 225.85 грн |
| 800+ | 192.63 грн |
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Технічний опис IPF016N10NF2SATMA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 274A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 267µA, Supplier Device Package: PG-TO263-7-14, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V.
Інші пропозиції IPF016N10NF2SATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IPF016N10NF2SATMA1 | Виробник : Infineon Technologies |
 SP005578929 |
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IPF016N10NF2SATMA1 | Виробник : Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 274A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 267µA Supplier Device Package: PG-TO263-7-14 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V |
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IPF016N10NF2SATMA1 | Виробник : Infineon Technologies |
Description: TRENCH >=100V Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 274A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 267µA Supplier Device Package: PG-TO263-7-14 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V |
товар відсутній |