IPG20N06S2L65AAUMA1 Infineon Technologies

Description: MOSFET 2N-CH 55V 20A 8TDSON, Packaging: Bulk, Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 43W (Tc), Drain to Source Voltage (Vdss): 55V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V, Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 14µA, Supplier Device Package: PG-TDSON-8-10.