IPG20N06S415AATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6405 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 491+ | 40.68 грн |
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Технічний опис IPG20N06S415AATMA1 Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 50W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 20A, Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V, Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 20µA, Supplier Device Package: PG-TDSON-8-10, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції IPG20N06S415AATMA1 за ціною від 46.53 грн до 123.06 грн
| Фото | Назва | Виробник | Інформація |
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IPG20N06S415AATMA1 | Виробник : Infineon Technologies |
MOSFET N-CHANNEL_55/60V |
на замовлення 663 шт: термін постачання 21-30 дні (днів) |
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IPG20N06S415AATMA1 | Виробник : Infineon Technologies |
Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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IPG20N06S415AATMA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R |
товар відсутній |
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IPG20N06S415AATMA1 | Виробник : Infineon Technologies |
Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |