IPI50R140CPXKSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: HIGH POWER_LEGACY
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
на замовлення 20374 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 144+ | 136.92 грн |
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Технічний опис IPI50R140CPXKSA1 Infineon Technologies
Description: HIGH POWER_LEGACY, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V, Power Dissipation (Max): 192W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 930µA, Supplier Device Package: PG-TO262-3-1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V.
Інші пропозиції IPI50R140CPXKSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IPI50R140CPXKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 192W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 23A Power dissipation: 192W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| IPI50R140CPXKSA1 | Виробник : Infineon Technologies |
Description: HIGH POWER_LEGACY Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 930µA Supplier Device Package: PG-TO262-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V |
товар відсутній |
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IPI50R140CPXKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 192W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 23A Power dissipation: 192W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Kind of channel: enhanced |
товар відсутній |