IPI70N10S3L12AKSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 100V 70A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 452+ | 43.68 грн |
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Технічний опис IPI70N10S3L12AKSA1 Infineon Technologies
Description: MOSFET N-CH 100V 70A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 12.1mOhm @ 70A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 83µA, Supplier Device Package: PG-TO262-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V.
Інші пропозиції IPI70N10S3L12AKSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IPI70N10S3L12AKSA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 100V 70A Automotive 3-Pin(3+Tab) TO-262 Tube |
товар відсутній |
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IPI70N10S3L12AKSA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 100V 70A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 12.1mOhm @ 70A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 83µA Supplier Device Package: PG-TO262-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V |
товар відсутній |