на замовлення 3378 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 511.73 грн |
| 10+ | 432.25 грн |
| 25+ | 341.15 грн |
| 100+ | 313.11 грн |
| 250+ | 295.08 грн |
| 500+ | 276.39 грн |
| 1000+ | 248.35 грн |
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Технічний опис IPT039N15N5ATMA1 Infineon Technologies
Description: OPTIMOS 5 POWER MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V, Power Dissipation (Max): 3.8W (Ta), 319W (Tc), Vgs(th) (Max) @ Id: 4.6V @ 257µA, Supplier Device Package: PG-HSOF-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V.
Інші пропозиції IPT039N15N5ATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IPT039N15N5ATMA1 | Виробник : Infineon Technologies |
 N Channel Power Mosfet |
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IPT039N15N5ATMA1 | Виробник : Infineon Technologies |
Description: OPTIMOS 5 POWER MOSFET Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 319W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 257µA Supplier Device Package: PG-HSOF-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V |
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IPT039N15N5ATMA1 | Виробник : Infineon Technologies |
Description: OPTIMOS 5 POWER MOSFET Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 319W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 257µA Supplier Device Package: PG-HSOF-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V |
товар відсутній |