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IPU50R3K0CEBKMA1

IPU50R3K0CEBKMA1 Infineon Technologies

IPx50R3K0CE.pdf Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 1.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V
на замовлення 25539 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2597+8 грн
Мінімальне замовлення: 2597
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Технічний опис IPU50R3K0CEBKMA1 Infineon Technologies

Description: MOSFET N-CH 500V 1.7A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V, Power Dissipation (Max): 18W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 30µA, Supplier Device Package: PG-TO251-3, Drive Voltage (Max Rds On, Min Rds On): 13V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V.

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IPU50R3K0CEBKMA1 IPU50R3K0CEBKMA1 Виробник : Infineon Technologies IPx50R3K0CE.pdf Description: MOSFET N-CH 500V 1.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V
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