IPU80R750P7AKMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: IPU80R750 - 800V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
на замовлення 26025 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 420+ | 51.27 грн |
Відгуки про товар
Написати відгук
Технічний опис IPU80R750P7AKMA1 Infineon Technologies
Description: IPU80R750 - 800V COOLMOS N-CHANN, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V, Power Dissipation (Max): 51W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 140µA, Supplier Device Package: PG-TO251-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V.
Інші пропозиції IPU80R750P7AKMA1 за ціною від 45.4 грн до 144.09 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IPU80R750P7AKMA1 | Виробник : Infineon Technologies |
MOSFET LOW POWER_NEW |
на замовлення 86 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
 |
IPU80R750P7AKMA1 | Виробник : Infineon Technologies |
800V CoolMOS P7 Power Transistor |
товар відсутній |
|||||||||||||||||
 |
IPU80R750P7AKMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; IPAK Mounting: THT Drain-source voltage: 800V Drain current: 4.6A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Power dissipation: 51W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ESD protected gate Gate charge: 17nC Technology: CoolMOS™ P7 Case: IPAK Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||||||
|
|
IPU80R750P7AKMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; IPAK Mounting: THT Drain-source voltage: 800V Drain current: 4.6A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Power dissipation: 51W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ESD protected gate Gate charge: 17nC Technology: CoolMOS™ P7 Case: IPAK Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |