IPZ40N04S53R1ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 30µA
Supplier Device Package: PG-TSDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 30µA
Supplier Device Package: PG-TSDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
5000+ | 31.53 грн |
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Технічний опис IPZ40N04S53R1ATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 40A 8TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V, Power Dissipation (Max): 71W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 30µA, Supplier Device Package: PG-TSDSON-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції IPZ40N04S53R1ATMA1 за ціною від 28.64 грн до 85.68 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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IPZ40N04S53R1ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 40V 40A 8TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 30µA Supplier Device Package: PG-TSDSON-8 Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6785 шт: термін постачання 21-31 дні (днів) |
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IPZ40N04S53R1ATMA1 | Виробник : Infineon Technologies | MOSFET MOSFET_(20V 40V) |
на замовлення 10369 шт: термін постачання 21-30 дні (днів) |
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IPZ40N04S53R1ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8 Technology: OptiMOS™ 5 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 71W Application: automotive industry Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 40A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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IPZ40N04S53R1ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8 Technology: OptiMOS™ 5 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 71W Application: automotive industry Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 40A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET |
товар відсутній |