IPZ60R037P7XKSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 76A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.48mA
Supplier Device Package: PG-TO247-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V
Description: MOSFET N-CH 650V 76A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.48mA
Supplier Device Package: PG-TO247-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V
на замовлення 2658 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 53+ | 410.92 грн |
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Технічний опис IPZ60R037P7XKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 76A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 76A (Tc), Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V, Power Dissipation (Max): 255W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.48mA, Supplier Device Package: PG-TO247-4, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V.
Інші пропозиції IPZ60R037P7XKSA1 за ціною від 622.88 грн до 971.27 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPZ60R037P7XKSA1 | Виробник : Infineon Technologies |
 MOSFET |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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IPZ60R037P7XKSA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 600V 76A 4-Pin(4+Tab) TO-247 Tube |
товар відсутній |
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IPZ60R037P7XKSA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 650V 76A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V Power Dissipation (Max): 255W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.48mA Supplier Device Package: PG-TO247-4 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V |
товар відсутній |