IPZ65R095C7XKSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 650V 24A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 510.58 грн |
| 10+ | 444.24 грн |
| 100+ | 367.77 грн |
Відгуки про товар
Написати відгук
Технічний опис IPZ65R095C7XKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 24A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V, Power Dissipation (Max): 128W (Tc), Vgs(th) (Max) @ Id: 4V @ 590µA, Supplier Device Package: PG-TO247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V.
Інші пропозиції IPZ65R095C7XKSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IPZ65R095C7XKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO247-4 Type of transistor: N-MOSFET Technology: CoolMOS™ C7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Power dissipation: 128W Case: PG-TO247-4 Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 1 шт |
товар відсутній |
||
 |
IPZ65R095C7XKSA1 | Виробник : Infineon Technologies |
MOSFET HIGH POWER_NEW |
товар відсутній |
|
| IPZ65R095C7XKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO247-4 Type of transistor: N-MOSFET Technology: CoolMOS™ C7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Power dissipation: 128W Case: PG-TO247-4 Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
товар відсутній |