на замовлення 62 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1323.32 грн |
| 10+ | 1198.47 грн |
| 100+ | 880.58 грн |
| 480+ | 767.75 грн |
| 1200+ | 761.75 грн |
| 2640+ | 749.06 грн |
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Технічний опис IPZA60R024P7XKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 101A TO247-4-3, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 101A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 42A, 10V, Power Dissipation (Max): 291W (Tc), Vgs(th) (Max) @ Id: 4V @ 2.03mA, Supplier Device Package: PG-TO247-4-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7144 pF @ 400 V.
Інші пропозиції IPZA60R024P7XKSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IPZA60R024P7XKSA1 | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 600V 101A Tube |
товар відсутній |
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| IPZA60R024P7XKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 63A; Idm: 386A; 291W Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 63A Pulsed drain current: 386A Power dissipation: 291W Case: PG-TO247-4 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: THT Gate charge: 164nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 1 шт |
товар відсутній |
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IPZA60R024P7XKSA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 600V 101A Tube |
товар відсутній |
|
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IPZA60R024P7XKSA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 600V 101A TO247-4-3 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 101A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 42A, 10V Power Dissipation (Max): 291W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.03mA Supplier Device Package: PG-TO247-4-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7144 pF @ 400 V |
товар відсутній |
|
| IPZA60R024P7XKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 63A; Idm: 386A; 291W Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 63A Pulsed drain current: 386A Power dissipation: 291W Case: PG-TO247-4 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: THT Gate charge: 164nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
товар відсутній |