на замовлення 240 шт:
термін постачання 294-303 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 860.66 грн |
| 10+ | 727.83 грн |
| 100+ | 523.41 грн |
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Технічний опис IPZA60R045P7XKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 61A TO247-4-3, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 61A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V, Power Dissipation (Max): 201W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.08mA, Supplier Device Package: PG-TO247-4-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3891 pF @ 400 V.
Інші пропозиції IPZA60R045P7XKSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| IPZA60R045P7XKSA1 | Виробник : INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 206A; 201W Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Pulsed drain current: 206A Power dissipation: 201W Case: PG-TO247-4 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 1 шт |
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IPZA60R045P7XKSA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 600V 61A Tube |
товар відсутній |
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IPZA60R045P7XKSA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 600V 61A Tube |
товар відсутній |
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IPZA60R045P7XKSA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 650V 61A TO247-4-3 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V Power Dissipation (Max): 201W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.08mA Supplier Device Package: PG-TO247-4-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3891 pF @ 400 V |
товар відсутній |
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| IPZA60R045P7XKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 206A; 201W Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Pulsed drain current: 206A Power dissipation: 201W Case: PG-TO247-4 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
товар відсутній |