IRF150P220XKMA1

IRF150P220XKMA1 Infineon Technologies


infineon-irf150p220-datasheet-v01_01-en.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH 150V 316A Tube
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Технічний опис IRF150P220XKMA1 Infineon Technologies

Description: MOSFET N-CH 150V 203A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 203A (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V, Power Dissipation (Max): 556W (Tc), Vgs(th) (Max) @ Id: 4.6V @ 265µA, Supplier Device Package: PG-TO247-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 75 V.

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IRF150P220XKMA1 IRF150P220XKMA1 Виробник : Infineon Technologies Infineon-IRF150P220-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166aca241ac65c9 Description: MOSFET N-CH 150V 203A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 265µA
Supplier Device Package: PG-TO247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 75 V
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IRF150P220XKMA1 IRF150P220XKMA1 Виробник : Infineon Technologies Infineon_IRF150P220_DataSheet_v01_01_EN-2324352.pdf MOSFET TRENCH >=100V
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