IRG4BC10SDPBF

IRG4BC10SDPBF Infineon Technologies


irg4bc10sdpbf.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 600V 14A 38000mW 3-Pin(3+Tab) TO-220AB
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Технічний опис IRG4BC10SDPBF Infineon Technologies

Description: IGBT 600V 14A 38W TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 28 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A, Supplier Device Package: TO-220AB, Td (on/off) @ 25°C: 76ns/815ns, Switching Energy: 310µJ (on), 3.28mJ (off), Test Condition: 480V, 8A, 100Ohm, 15V, Gate Charge: 15 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 14 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 18 A, Power - Max: 38 W.

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IRG4BC10SDPBF IRG4BC10SDPBF Виробник : Infineon Technologies irg4bc10sdpbf.pdf Description: IGBT 600V 14A 38W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 76ns/815ns
Switching Energy: 310µJ (on), 3.28mJ (off)
Test Condition: 480V, 8A, 100Ohm, 15V
Gate Charge: 15 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 38 W
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IRG4BC10SDPBF IRG4BC10SDPBF Виробник : Infineon / IR irg4bc10sd-1169368.pdf IGBT Transistors 600V DC-1kHz
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