IRG4BC15UD-LPBF

IRG4BC15UD-LPBF Infineon Technologies


infineon-irg4bc15ud-datasheet-v01_00-en.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 600V 14A 49000mW 3-Pin(3+Tab) TO-262 Tube
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис IRG4BC15UD-LPBF Infineon Technologies

Description: IRG4BC15 - Discrete IGBT with An, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 28 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A, Supplier Device Package: TO-262, Td (on/off) @ 25°C: 17ns/160ns, Switching Energy: 240µJ (on), 260µJ (off), Test Condition: 480V, 7.8A, 75Ohm, 15V, Gate Charge: 23 nC, Current - Collector (Ic) (Max): 14 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 42 A, Power - Max: 49 W.

Інші пропозиції IRG4BC15UD-LPBF

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
IRG4BC15UD-LPBF Виробник : International Rectifier Description: IRG4BC15 - Discrete IGBT with An
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A
Supplier Device Package: TO-262
Td (on/off) @ 25°C: 17ns/160ns
Switching Energy: 240µJ (on), 260µJ (off)
Test Condition: 480V, 7.8A, 75Ohm, 15V
Gate Charge: 23 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 42 A
Power - Max: 49 W
товар відсутній
IRG4BC15UD-LPBF IRG4BC15UD-LPBF Виробник : Infineon / IR Infineon_IRG4BC15UD_DataSheet_v01_00_EN-1732814.pdf IGBT Transistors 600V UltraFast 10-30kHz
товар відсутній