Технічний опис IRG4BC20FDPBF Infineon Technologies
Description: IGBT 600V 16A 60W TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 37 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A, Supplier Device Package: TO-220AB, Td (on/off) @ 25°C: 43ns/240ns, Switching Energy: 250µJ (on), 640µJ (off), Test Condition: 480V, 9A, 50Ohm, 15V, Gate Charge: 27 nC, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 64 A, Power - Max: 60 W.
Інші пропозиції IRG4BC20FDPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IRG4BC20FDPBF | Виробник : INFINEON |
 Description: INFINEON - IRG4BC20FDPBF - IGBT, 16 A, 1.66 V, 60 W, 600 V, TO-220AB, 3 Pin(s)Transistormontage: Durchsteckmontage Kollektor-Emitter-Sättigungsspannung: 1.66 Verlustleistung: 60 Bauform - Transistor: TO-220AB Anzahl der Pins: 3 Produktpalette: - Kollektor-Emitter-Spannung, max.: 600 Betriebstemperatur, max.: 150 Kollektorstrom: 16 SVHC: No SVHC (27-Jun-2018) |
товар відсутній |
|
 |
IRG4BC20FDPBF | Виробник : Infineon Technologies |
Description: IGBT 600V 16A 60W TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 37 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A Supplier Device Package: TO-220AB Td (on/off) @ 25°C: 43ns/240ns Switching Energy: 250µJ (on), 640µJ (off) Test Condition: 480V, 9A, 50Ohm, 15V Gate Charge: 27 nC Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 64 A Power - Max: 60 W |
товар відсутній |
|
 |
IRG4BC20FDPBF | Виробник : Infineon / IR |
IGBT Transistors 600V Fast 1-8kHz |
товар відсутній |