IRG4BC20MD-SPBF

IRG4BC20MD-SPBF Infineon Technologies


irg4bc20md-spbf.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 600V 18A 60000mW 3-Pin(2+Tab) D2PAK
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Технічний опис IRG4BC20MD-SPBF Infineon Technologies

Description: IGBT 600V 18A 60W D2PAK, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 37 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 11A, Supplier Device Package: D2PAK, Td (on/off) @ 25°C: 21ns/463ns, Switching Energy: 410µJ (on), 2.03mJ (off), Test Condition: 480V, 11A, 50Ohm, 15V, Gate Charge: 39 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 18 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 36 A, Power - Max: 60 W.

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IRG4BC20MD-SPBF IRG4BC20MD-SPBF Виробник : Infineon Technologies IRG4BC20MD-SPbF.pdf Description: IGBT 600V 18A 60W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 11A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 21ns/463ns
Switching Energy: 410µJ (on), 2.03mJ (off)
Test Condition: 480V, 11A, 50Ohm, 15V
Gate Charge: 39 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 60 W
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IRG4BC20MD-SPBF IRG4BC20MD-SPBF Виробник : Infineon / IR irg4bc20md-s-1169470.pdf IGBT Transistors 600V Fast 1-8kHz
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