IRG4BC20MDPBF

IRG4BC20MDPBF Infineon Technologies


IRG4BC20MDPbF.pdf Виробник: Infineon Technologies
Description: IGBT 600V 18A 60W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 11A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 21ns/463ns
Switching Energy: 410µJ (on), 2.03mJ (off)
Test Condition: 480V, 11A, 50Ohm, 15V
Gate Charge: 39 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 36 A
Power - Max: 60 W
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Технічний опис IRG4BC20MDPBF Infineon Technologies

Description: IGBT 600V 18A 60W TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 37 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 11A, Supplier Device Package: TO-220AB, Td (on/off) @ 25°C: 21ns/463ns, Switching Energy: 410µJ (on), 2.03mJ (off), Test Condition: 480V, 11A, 50Ohm, 15V, Gate Charge: 39 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 18 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 36 A, Power - Max: 60 W.

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IRG4BC20MDPBF IRG4BC20MDPBF Виробник : Infineon / IR irg4bc20md-1169528.pdf IGBT Transistors 600V Fast 1-8kHz
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