IRG4BC20UDPBF

IRG4BC20UDPBF Infineon Technologies


infineon-irg4bc20ud-datasheet-v01_00-en.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 600V 13A 60000mW 3-Pin(3+Tab) TO-220AB Tube
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Технічний опис IRG4BC20UDPBF Infineon Technologies

Description: IGBT 600V 13A 60W TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 37 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A, Supplier Device Package: TO-220AB, Td (on/off) @ 25°C: 39ns/93ns, Switching Energy: 160µJ (on), 130µJ (off), Test Condition: 480V, 6.5A, 50Ohm, 15V, Gate Charge: 27 nC, Current - Collector (Ic) (Max): 13 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 52 A, Power - Max: 60 W.

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IRG4BC20UDPBF IRG4BC20UDPBF Виробник : Infineon Technologies IRG4BC20UDPbF.pdf Description: IGBT 600V 13A 60W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 39ns/93ns
Switching Energy: 160µJ (on), 130µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
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IRG4BC20UDPBF IRG4BC20UDPBF Виробник : Infineon / IR Infineon-IRG4BC20UD-DataSheet-v01_00-EN-1732757.pdf IGBT Transistors 600V UltraFast 8-60kHz
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