IRG4BC30S-SPBF

IRG4BC30S-SPBF Infineon Technologies


irg4bc30s-spbf.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 600V 34A 100000mW 3-Pin(2+Tab) D2PAK
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Технічний опис IRG4BC30S-SPBF Infineon Technologies

Description: IGBT 600V 34A 100W D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A, Supplier Device Package: D2PAK, Td (on/off) @ 25°C: 22ns/540ns, Switching Energy: 260µJ (on), 3.45mJ (off), Test Condition: 480V, 18A, 23Ohm, 15V, Gate Charge: 50 nC, Current - Collector (Ic) (Max): 34 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 68 A, Power - Max: 100 W.

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IRG4BC30S-SPBF IRG4BC30S-SPBF Виробник : Infineon Technologies IRG4BC30S-SPbF.pdf Description: IGBT 600V 34A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
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