IRG4BC30W-SPBF Infineon Technologies
Виробник: Infineon TechnologiesDescription: IGBT 600V 23A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 25ns/99ns
Switching Energy: 130µJ (on), 130µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
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Технічний опис IRG4BC30W-SPBF Infineon Technologies
Description: IGBT 600V 23A 100W D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A, Supplier Device Package: D2PAK, Td (on/off) @ 25°C: 25ns/99ns, Switching Energy: 130µJ (on), 130µJ (off), Test Condition: 480V, 12A, 23Ohm, 15V, Gate Charge: 51 nC, Current - Collector (Ic) (Max): 23 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 92 A, Power - Max: 100 W.
Інші пропозиції IRG4BC30W-SPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IRG4BC30W-SPBF | Виробник : Infineon Technologies |
IGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBT |
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