Технічний опис IRG4BC40W-SPBF Infineon Technologies
Description: IGBT 600V 40A 160W D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A, Supplier Device Package: D2PAK, Td (on/off) @ 25°C: 27ns/100ns, Switching Energy: 110µJ (on), 230µJ (off), Test Condition: 480V, 20A, 10Ohm, 15V, Gate Charge: 98 nC, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 160 W.
Інші пропозиції IRG4BC40W-SPBF
| Фото | Назва | Виробник | Інформація |
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IRG4BC40W-SPBF | Виробник : INFINEON |
 Description: INFINEON - IRG4BC40W-SPBF - IGBT, 40 A, 2.5 V, 160 W, 600 V, TO-263 (D2PAK), 3 Pin(s)MSL: MSL 1 - unbegrenzt Kollektor-Emitter-Sättigungsspannung Vce(on): 2.5 Verlustleistung Pd: 160 Bauform - Transistor: TO-263 (D2PAK) Kollektor-Emitter-Spannung V(br)ceo: 600 Anzahl der Pins: 3 Produktpalette: - DC-Kollektorstrom: 40 Betriebstemperatur, max.: 150 SVHC: No SVHC (27-Jun-2018) |
товар відсутній |
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IRG4BC40W-SPBF | Виробник : Infineon Technologies |
Description: IGBT 600V 40A 160W D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 27ns/100ns Switching Energy: 110µJ (on), 230µJ (off) Test Condition: 480V, 20A, 10Ohm, 15V Gate Charge: 98 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 160 W |
товар відсутній |
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IRG4BC40W-SPBF | Виробник : Infineon / IR |
IGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBT |
товар відсутній |