Технічний опис IRG4BC40WPBF Infineon Technologies
Description: IGBT 600V 40A 160W TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A, Supplier Device Package: TO-220AB, Td (on/off) @ 25°C: 27ns/100ns, Switching Energy: 110µJ (on), 230µJ (off), Test Condition: 480V, 20A, 10Ohm, 15V, Gate Charge: 98 nC, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 160 W.
Інші пропозиції IRG4BC40WPBF
| Фото | Назва | Виробник | Інформація |
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IRG4BC40WPBF | Виробник : INFINEON |
 Description: INFINEON - IRG4BC40WPBF - IGBT, 40 A, 2.5 V, 160 W, 600 V, TO-220AB, 3 Pin(s)Kollektor-Emitter-Sättigungsspannung Vce(on): 2.5 DC-Kollektorstrom: 40 Anzahl der Pins: 3 Bauform - Transistor: TO-220AB Kollektor-Emitter-Spannung V(br)ceo: 600 Verlustleistung Pd: 160 Betriebstemperatur, max.: 150 Produktpalette: - SVHC: No SVHC (27-Jun-2018) |
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IRG4BC40WPBF | Виробник : Infineon Technologies |
Description: IGBT 600V 40A 160W TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-220AB Td (on/off) @ 25°C: 27ns/100ns Switching Energy: 110µJ (on), 230µJ (off) Test Condition: 480V, 20A, 10Ohm, 15V Gate Charge: 98 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 160 W |
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IRG4BC40WPBF | Виробник : Infineon / IR |
IGBT Transistors 600V Warp 60-150kHz |
товар відсутній |