IRG4BH20K-LPBF

IRG4BH20K-LPBF Infineon Technologies


irg4bh20k-lpbf-1227882.pdf Виробник: Infineon Technologies
IGBT Transistors 1200V UltraFast 4-20kHz
на замовлення 435 шт:

термін постачання 21-30 дні (днів)
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Технічний опис IRG4BH20K-LPBF Infineon Technologies

Description: IGBT 1200V 11A 60W TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A, Supplier Device Package: TO-262, Td (on/off) @ 25°C: 23ns/93ns, Switching Energy: 450µJ (on), 440µJ (off), Test Condition: 960V, 5A, 50Ohm, 15V, Gate Charge: 28 nC, Current - Collector (Ic) (Max): 11 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 22 A, Power - Max: 60 W.

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IRG4BH20K-LPBF IRG4BH20K-LPBF Виробник : Infineon Technologies irg4bh20k-lpbf.pdf?fileId=5546d462533600a40153564356a822a5 Description: IGBT 1200V 11A 60W TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Supplier Device Package: TO-262
Td (on/off) @ 25°C: 23ns/93ns
Switching Energy: 450µJ (on), 440µJ (off)
Test Condition: 960V, 5A, 50Ohm, 15V
Gate Charge: 28 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 60 W
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