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IRG4IBC10UDPBF Infineon Technologies

Name: IRG4IBC10UDPBF
Brand: Infineon Technologies
SKU: 12369760-3
Price: 87.81 UAH
Availability: InStock

irg4ibc10udpbf.pdf?fileId=5546d462533600a401535643673122a9

Виробник: Infineon Technologies
Description: IGBT 600V 6.8A 25W TO220FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 40ns/87ns
Switching Energy: 140µJ (on), 120µJ (off)
Test Condition: 480V, 5A, 100Ohm, 15V
Gate Charge: 15 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 6.8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 27 A
Power - Max: 25 W

на замовлення 2157 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна без ПДВ
228+	87.81 грн

Мінімальне замовлення: 228

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Технічний опис IRG4IBC10UDPBF Infineon Technologies

Description: IGBT 600V 6.8A 25W TO220FP, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 28 ns, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A, Supplier Device Package: TO-220AB Full-Pak, Td (on/off) @ 25°C: 40ns/87ns, Switching Energy: 140µJ (on), 120µJ (off), Test Condition: 480V, 5A, 100Ohm, 15V, Gate Charge: 15 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 6.8 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 27 A, Power - Max: 25 W.

Інші пропозиції IRG4IBC10UDPBF

Назва	Виробник	Інформація	Доступність
IRG4IBC10UDPBF	Виробник : Infineon / IR	IGBT Transistors 600V UltraFast 8-60kHz	на замовлення 834 шт: термін постачання 21-30 дні (днів)
IRG4IBC10UDPBF	Виробник : INFINEON TECHNOLOGIES	Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 3.9A; 25W; TO220AB; single transistor Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 3.9A Power dissipation: 25W Case: TO220AB Mounting: THT Kind of package: tube Semiconductor structure: single transistor Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт	товар відсутній
IRG4IBC10UDPBF	Виробник : Infineon Technologies	Description: IGBT 600V 6.8A 25W TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 28 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A Supplier Device Package: TO-220AB Full-Pak Td (on/off) @ 25°C: 40ns/87ns Switching Energy: 140µJ (on), 120µJ (off) Test Condition: 480V, 5A, 100Ohm, 15V Gate Charge: 15 nC Part Status: Obsolete Current - Collector (Ic) (Max): 6.8 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 27 A Power - Max: 25 W	товар відсутній
IRG4IBC10UDPBF	Виробник : INFINEON TECHNOLOGIES	Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 3.9A; 25W; TO220AB; single transistor Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 3.9A Power dissipation: 25W Case: TO220AB Mounting: THT Kind of package: tube Semiconductor structure: single transistor Features of semiconductor devices: integrated anti-parallel diode	товар відсутній