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IRG4IBC30S


Infineon-IRG4IBC30S-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a4015356439d2422b8 Виробник:
IRG4IBC30S Транзисторы IGB-transistors
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термін постачання 2-3 дні (днів)
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Технічний опис IRG4IBC30S

Description: IGBT 600V 23.5A 45W TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A, Supplier Device Package: TO-220AB Full-Pak, Td (on/off) @ 25°C: 22ns/540ns, Switching Energy: 260µJ (on), 3.45mJ (off), Test Condition: 480V, 18A, 23Ohm, 15V, Gate Charge: 50 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 23.5 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 68 A, Power - Max: 45 W.

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IRG4IBC30S IRG4IBC30S Виробник : Infineon Technologies Infineon-IRG4IBC30S-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a4015356439d2422b8 Description: IGBT 600V 23.5A 45W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 23.5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 45 W
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