IRG4IBC30WPBF

IRG4IBC30WPBF Infineon Technologies


infineon-irg4ibc30w-datasheet-v01_00-en.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 600V 17A 45000mW 3-Pin(3+Tab) TO-220AB Full-Pak Tube
на замовлення 20 шт:

термін постачання 21-31 дні (днів)
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Технічний опис IRG4IBC30WPBF Infineon Technologies

Description: COPACK IGBT W/ULTRAFAST SOFT REC, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A, Supplier Device Package: TO-220AB Full-Pak, Td (on/off) @ 25°C: 25ns/99ns, Switching Energy: 130µJ (on), 130µJ (off), Test Condition: 480V, 12A, 23Ohm, 15V, Gate Charge: 51 nC, Part Status: Active, Current - Collector (Ic) (Max): 17 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 92 A, Power - Max: 45 W.

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IRG4IBC30WPBF IRG4IBC30WPBF Виробник : Infineon Technologies infineon-irg4ibc30w-datasheet-v01_00-en.pdf Trans IGBT Chip N-CH 600V 17A 45W 3-Pin(3+Tab) TO-220AB Full-Pak Tube
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
IRG4IBC30WPBF IRG4IBC30WPBF Виробник : INFINEON irg4ibc30wpbf.pdf Description: INFINEON - IRG4IBC30WPBF - IGBT, 17 A, 2.1 V, 45 W, 600 V, TO-220FP, 3 Pin(s)
Kollektor-Emitter-Sättigungsspannung Vce(on): 2.1
DC-Kollektorstrom: 17
Anzahl der Pins: 3
Bauform - Transistor: TO-220FP
Kollektor-Emitter-Spannung V(br)ceo: 600
Verlustleistung Pd: 45
Betriebstemperatur, max.: 150
Produktpalette: IRG4
SVHC: No SVHC (27-Jun-2018)
товар відсутній
IRG4IBC30WPBF IRG4IBC30WPBF Виробник : INFINEON TECHNOLOGIES irg4ibc30wpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 17A; 45W; TO220AB; single transistor
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Power dissipation: 45W
Type of transistor: IGBT
Semiconductor structure: single transistor
Collector current: 17A
кількість в упаковці: 1 шт
товар відсутній
IRG4IBC30WPBF IRG4IBC30WPBF Виробник : International Rectifier IRSDS13200-1.pdf?t.download=true&u=5oefqw Description: COPACK IGBT W/ULTRAFAST SOFT REC
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 25ns/99ns
Switching Energy: 130µJ (on), 130µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 51 nC
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 45 W
товар відсутній
IRG4IBC30WPBF IRG4IBC30WPBF Виробник : Infineon Technologies irg4ibc30wpbf.pdf?fileId=5546d462533600a401535643ad8622bc Description: IGBT 600V 17A 45W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 25ns/99ns
Switching Energy: 130µJ (on), 130µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 51 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 45 W
товар відсутній
IRG4IBC30WPBF IRG4IBC30WPBF Виробник : Infineon / IR Infineon-IRG4IBC30W-DataSheet-v01_00-EN-1732922.pdf IGBT Transistors 600V Warp 60-150kHz
товар відсутній
IRG4IBC30WPBF IRG4IBC30WPBF Виробник : INFINEON TECHNOLOGIES irg4ibc30wpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 17A; 45W; TO220AB; single transistor
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Power dissipation: 45W
Type of transistor: IGBT
Semiconductor structure: single transistor
Collector current: 17A
товар відсутній