Технічний опис IRG4PC50FD-EPBF IR
Description: IGBT 600V 70A 200W TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 50 ns, Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A, Supplier Device Package: TO-247AC, Td (on/off) @ 25°C: 55ns/240ns, Switching Energy: 1.5mJ (on), 2.4mJ (off), Test Condition: 480V, 39A, 5Ohm, 15V, Gate Charge: 190 nC, Current - Collector (Ic) (Max): 70 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 280 A, Power - Max: 200 W.
Інші пропозиції IRG4PC50FD-EPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IRG4PC50FD-EPBF | Виробник : Infineon Technologies |
 Trans IGBT Chip N-CH 600V 70A 200000mW 3-Pin(3+Tab) TO-247AC Tube |
товар відсутній |
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IRG4PC50FD-EPBF | Виробник : Infineon Technologies |
Description: IGBT 600V 70A 200W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 55ns/240ns Switching Energy: 1.5mJ (on), 2.4mJ (off) Test Condition: 480V, 39A, 5Ohm, 15V Gate Charge: 190 nC Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 280 A Power - Max: 200 W |
товар відсутній |
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IRG4PC50FD-EPBF | Виробник : Infineon / IR |
IGBT Transistors 600V FAST 1-8 KHZ COPACK IGBT |
товар відсутній |