IRG4PC50SDPBF

IRG4PC50SDPBF Infineon Technologies


infineon-irg4pc50sd-datasheet-v01_00-en.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 600V 70A 200000mW 3-Pin(3+Tab) TO-247AC Tube
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Технічний опис IRG4PC50SDPBF Infineon Technologies

Description: IGBT 600V 70A 200W TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 50 ns, Vce(on) (Max) @ Vge, Ic: 1.36V @ 15V, 41A, Supplier Device Package: TO-247AC, Td (on/off) @ 25°C: 33ns/650ns, Switching Energy: 720µJ (on), 8.27mJ (off), Test Condition: 480V, 41A, 5Ohm, 15V, Gate Charge: 180 nC, Current - Collector (Ic) (Max): 70 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 140 A, Power - Max: 200 W.

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IRG4PC50SDPBF IRG4PC50SDPBF Виробник : Infineon Technologies irg4pc50sdpbf.pdf?fileId=5546d462533600a401535644729d22ee Description: IGBT 600V 70A 200W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 1.36V @ 15V, 41A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 33ns/650ns
Switching Energy: 720µJ (on), 8.27mJ (off)
Test Condition: 480V, 41A, 5Ohm, 15V
Gate Charge: 180 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 200 W
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IRG4PC50SDPBF IRG4PC50SDPBF Виробник : Infineon / IR Infineon-IRG4PC50SD-DataSheet-v01_00-EN-1732909.pdf IGBT Transistors 600V ULTRAFAST COPACK IGBT
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