Технічний опис IRG4PH30KPBF Infineon Technologies
Description: IGBT 1200V 20A 100W TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 10A, Supplier Device Package: TO-247AC, Td (on/off) @ 25°C: 28ns/200ns, Switching Energy: 640µJ (on), 920µJ (off), Test Condition: 960V, 10A, 23Ohm, 15V, Gate Charge: 53 nC, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 100 W.
Інші пропозиції IRG4PH30KPBF
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IRG4PH30KPBF | Виробник : INFINEON |
 Description: INFINEON - IRG4PH30KPBF - IGBT, 20 A, 3.1 V, 100 W, 1.2 kV, TO-247AC, 3 Pin(s)Kollektor-Emitter-Sättigungsspannung Vce(on): 3.1 DC-Kollektorstrom: 20 Anzahl der Pins: 3 Bauform - Transistor: TO-247AC Kollektor-Emitter-Spannung V(br)ceo: 1.2 Verlustleistung Pd: 100 Betriebstemperatur, max.: 150 Produktpalette: IRG4 SVHC: No SVHC (27-Jun-2018) |
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IRG4PH30KPBF | Виробник : Infineon Technologies |
Description: IGBT 1200V 20A 100W TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 10A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 28ns/200ns Switching Energy: 640µJ (on), 920µJ (off) Test Condition: 960V, 10A, 23Ohm, 15V Gate Charge: 53 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 40 A Power - Max: 100 W |
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IRG4PH30KPBF | Виробник : Infineon Technologies |
IGBT Transistors 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT |
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