IRG4PH50KDPBF

IRG4PH50KDPBF Infineon Technologies


irg4ph50kdpbf.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 1200V 45A 200000mW 3-Pin(3+Tab) TO-247AC Tube
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Технічний опис IRG4PH50KDPBF Infineon Technologies

Description: IGBT 1200V 45A 200W TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 90 ns, Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 24A, Supplier Device Package: TO-247AC, Td (on/off) @ 25°C: 87ns/140ns, Switching Energy: 3.83mJ (on), 1.9mJ (off), Test Condition: 800V, 24A, 5Ohm, 15V, Gate Charge: 180 nC, Current - Collector (Ic) (Max): 45 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 200 W.

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IRG4PH50KDPBF IRG4PH50KDPBF Виробник : Infineon Technologies irg4ph50kdpbf.pdf?fileId=5546d462533600a40153564851dd231f Description: IGBT 1200V 45A 200W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 24A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 87ns/140ns
Switching Energy: 3.83mJ (on), 1.9mJ (off)
Test Condition: 800V, 24A, 5Ohm, 15V
Gate Charge: 180 nC
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 200 W
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IRG4PH50KDPBF IRG4PH50KDPBF Виробник : Infineon Technologies Infineon_IRG4PH50KD_DataSheet_v01_00_EN-1732743.pdf IGBT Transistors 1200V ULTRAFAST 4-20 KHZ COPACK IGBT
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