IRL3103D1PBF

IRL3103D1PBF Infineon Technologies


irl3103d1pbf.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH 30V 64A 3-Pin(3+Tab) TO-220AB
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис IRL3103D1PBF Infineon Technologies

Description: MOSFET N-CH 30V 64A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V, Power Dissipation (Max): 2W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V.

Інші пропозиції IRL3103D1PBF

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
IRL3103D1PBF IRL3103D1PBF Виробник : Infineon Technologies irl3103d1pbf.pdf Description: MOSFET N-CH 30V 64A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V
Power Dissipation (Max): 2W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
товар відсутній