Технічний опис IRL3202S IR
Description: MOSFET N-CH 20V 48A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 29A, 7V, Power Dissipation (Max): 69W (Tc), Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Supplier Device Package: D2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V.
Інші пропозиції IRL3202S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IRL3202S | Виробник : IR |
 TO-263 |
на замовлення 4000 шт: термін постачання 14-28 дні (днів) |
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IRL3202S | Виробник : Infineon Technologies |
Description: MOSFET N-CH 20V 48A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 29A, 7V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V |
товар відсутній |