IRS2003SPBF Infineon Technologies
на замовлення 3799 шт:
термін постачання 294-303 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 107.22 грн |
10+ | 88.84 грн |
100+ | 62.53 грн |
500+ | 52.01 грн |
1000+ | 42.82 грн |
2500+ | 40.56 грн |
3800+ | 38.49 грн |
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Технічний опис IRS2003SPBF Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Voltage - Supply: 10V ~ 20V, Input Type: Inverting, Non-Inverting, High Side Voltage - Max (Bootstrap): 200 V, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 70ns, 35ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: IGBT, N-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 2.5V, Current - Peak Output (Source, Sink): 290mA, 600mA, Part Status: Last Time Buy, DigiKey Programmable: Not Verified.
Інші пропозиції IRS2003SPBF
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IRS2003SPBF | Виробник : Infineon Technologies | Driver 200V 0.6A 2-OUT High and Low Side Half Brdg Inv/Non-Inv 8-Pin SOIC N Tube |
товар відсутній |
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IRS2003SPBF | Виробник : Infineon Technologies | Driver 200V 2-OUT High and Low Side Half Brdg Inv/Non-Inv 8-Pin SOIC N Tube |
товар відсутній |
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IRS2003SPBF | Виробник : INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Power: 625mW Mounting: SMD Supply voltage: 10...20V DC Number of channels: 2 Case: SO8 Operating temperature: -40...125°C Kind of package: tube Output current: -600...290mA Topology: MOSFET half-bridge Voltage class: 200V Turn-on time: 750ns Turn-off time: 180ns кількість в упаковці: 1 шт |
товар відсутній |
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IRS2003SPBF | Виробник : Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): 200 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 70ns, 35ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Part Status: Last Time Buy DigiKey Programmable: Not Verified |
товар відсутній |
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IRS2003SPBF | Виробник : INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Power: 625mW Mounting: SMD Supply voltage: 10...20V DC Number of channels: 2 Case: SO8 Operating temperature: -40...125°C Kind of package: tube Output current: -600...290mA Topology: MOSFET half-bridge Voltage class: 200V Turn-on time: 750ns Turn-off time: 180ns |
товар відсутній |