на замовлення 2821 шт:
термін постачання 647-656 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 303 грн |
| 10+ | 269.57 грн |
| 25+ | 221.09 грн |
| 100+ | 191.79 грн |
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Технічний опис IRS2106PBF Infineon / IR
Description: IC GATE DRV HI-SIDE/LO-SIDE 8DIP, Packaging: Tube, Package / Case: 8-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Voltage - Supply: 10V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 600 V, Supplier Device Package: 8-PDIP, Rise / Fall Time (Typ): 100ns, 35ns, Channel Type: Independent, Driven Configuration: High-Side or Low-Side, Number of Drivers: 2, Gate Type: IGBT, N-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 2.5V, Current - Peak Output (Source, Sink): 290mA, 600mA, DigiKey Programmable: Not Verified.
Інші пропозиції IRS2106PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IRS2106PBF | Виробник : Infineon Technologies |
 Driver 600V 0.6A 2-OUT High and Low Side Non-Inv 8-Pin PDIP Tube |
товар відсутній |
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IRS2106PBF | Виробник : Infineon Technologies |
Driver 600V 2-OUT High and Low Side Non-Inv 8-Pin PDIP Tube |
товар відсутній |
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IRS2106PBF | Виробник : INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -600...290mA Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 320ns Turn-off time: 235ns кількість в упаковці: 1 шт |
товар відсутній |
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IRS2106PBF | Виробник : Infineon Technologies |
Description: IC GATE DRV HI-SIDE/LO-SIDE 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 100ns, 35ns Channel Type: Independent Driven Configuration: High-Side or Low-Side Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA DigiKey Programmable: Not Verified |
товар відсутній |
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IRS2106PBF | Виробник : INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -600...290mA Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 320ns Turn-off time: 235ns |
товар відсутній |