IRS2109SPBF Infineon Technologies
Виробник: Infineon TechnologiesDriver 600V 0.6A 2-OUT High and Low Side Half Brdg Inv/Non-Inv 8-Pin SOIC N Tube
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Технічний опис IRS2109SPBF Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Voltage - Supply: 10V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 600 V, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 100ns, 35ns, Channel Type: Synchronous, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: IGBT, N-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 2.5V, Current - Peak Output (Source, Sink): 290mA, 600mA, DigiKey Programmable: Not Verified.
Інші пропозиції IRS2109SPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| IRS2109SPBF | Виробник : Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 100ns, 35ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA DigiKey Programmable: Not Verified |
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IRS2109SPBF | Виробник : Infineon Technologies |
Gate Drivers HALF BRDG DRVR 600V 120mA 750ns |
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