на замовлення 4147 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 386.33 грн |
| 10+ | 320.15 грн |
| 25+ | 262.37 грн |
| 100+ | 224.99 грн |
| 250+ | 212.3 грн |
| 500+ | 199.62 грн |
| 1000+ | 171.58 грн |
Відгуки про товар
Написати відгук
Технічний опис ISC030N12NM6ATMA1 Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 194A (Tc), Rds On (Max) @ Id, Vgs: 3.04mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 250W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 141µA, Supplier Device Package: PG-TSON-8-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 60 V.
Інші пропозиції ISC030N12NM6ATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| ISC030N12NM6ATMA1 | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 120V 21A 8-Pin TSON EP T/R |
товар відсутній |
||
| ISC030N12NM6ATMA1 | Виробник : Infineon Technologies |
Description: OPTIMOS 6 POWER-TRANSISTOR,120V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 194A (Tc) Rds On (Max) @ Id, Vgs: 3.04mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 141µA Supplier Device Package: PG-TSON-8-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 60 V |
товар відсутній |
||
| ISC030N12NM6ATMA1 | Виробник : Infineon Technologies |
Description: OPTIMOS 6 POWER-TRANSISTOR,120V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 194A (Tc) Rds On (Max) @ Id, Vgs: 3.04mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 141µA Supplier Device Package: PG-TSON-8-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 60 V |
товар відсутній |