IV1D06006P3 Inventchip
Виробник: InventchipDescription: DIODE SIC 650V 16.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 224pF @ 1V, 1MHz
Current - Average Rectified (Io): 16.7A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
на замовлення 2482 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 275.2 грн |
| 10+ | 222.53 грн |
| 100+ | 180.04 грн |
| 500+ | 150.19 грн |
| 1000+ | 128.6 грн |
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Технічний опис IV1D06006P3 Inventchip
Description: DIODE SIC 650V 16.7A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 224pF @ 1V, 1MHz, Current - Average Rectified (Io): 16.7A, Supplier Device Package: TO-252-3, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A, Current - Reverse Leakage @ Vr: 10 µA @ 650 V.
Інші пропозиції IV1D06006P3
| Фото | Назва | Виробник | Інформація |
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IV1D06006P3 | Виробник : Inventchip |
Description: DIODE SIC 650V 16.7A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 224pF @ 1V, 1MHz Current - Average Rectified (Io): 16.7A Supplier Device Package: TO-252-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 650 V |
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