Технічний опис IXGH25N250 Littelfuse
Category: THT IGBT transistors, Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3, Type of transistor: IGBT, Technology: NPT, Collector-emitter voltage: 2.5kV, Collector current: 25A, Power dissipation: 250W, Case: TO247-3, Gate-emitter voltage: ±20V, Pulsed collector current: 200A, Mounting: THT, Gate charge: 75nC, Kind of package: tube, Turn-on time: 301ns, Turn-off time: 409ns, Features of semiconductor devices: high voltage, кількість в упаковці: 1 шт.
Інші пропозиції IXGH25N250
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IXGH25N250 | Виробник : IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 2.5kV Collector current: 25A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 75nC Kind of package: tube Turn-on time: 301ns Turn-off time: 409ns Features of semiconductor devices: high voltage кількість в упаковці: 1 шт |
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IXGH25N250 | Виробник : IXYS |
Description: IGBT 2500V 60A 250W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A Supplier Device Package: TO-247AD IGBT Type: NPT Gate Charge: 75 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 200 A Power - Max: 250 W |
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IXGH25N250 | Виробник : IXYS |
IGBT Transistors IGBT NPT-VERY HI VOLTAGE |
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IXGH25N250 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 2.5kV Collector current: 25A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 75nC Kind of package: tube Turn-on time: 301ns Turn-off time: 409ns Features of semiconductor devices: high voltage |
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