IXKC23N60C5 IXYS
Виробник: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 147W
Case: ISOPLUS220™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
кількість в упаковці: 1 шт
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Технічний опис IXKC23N60C5 IXYS
Description: MOSFET N-CH 600V 23A ISOPLUS220, Packaging: Tube, Package / Case: ISOPLUS220™, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 18A, 10V, Vgs(th) (Max) @ Id: 3.9V @ 1.2mA, Supplier Device Package: ISOPLUS220™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V.
Інші пропозиції IXKC23N60C5
| Фото | Назва | Виробник | Інформація |
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IXKC23N60C5 | Виробник : IXYS |
Description: MOSFET N-CH 600V 23A ISOPLUS220 Packaging: Tube Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1.2mA Supplier Device Package: ISOPLUS220™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V |
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IXKC23N60C5 | Виробник : IXYS |
MOSFET 23 Amps 600V 0.1 Rds |
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IXKC23N60C5 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Power dissipation: 147W Case: ISOPLUS220™ On-state resistance: 0.1Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: super junction coolmos |
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