IXTA18P10T IXYS
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 62ns
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 62ns
кількість в упаковці: 1 шт
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Технічний опис IXTA18P10T IXYS
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO263, Type of transistor: P-MOSFET, Technology: TrenchP™, Polarisation: unipolar, Drain-source voltage: -100V, Drain current: -18A, Power dissipation: 83W, Case: TO263, Gate-source voltage: ±15V, On-state resistance: 0.12Ω, Mounting: SMD, Gate charge: 39nC, Kind of package: tube, Kind of channel: enhanced, Reverse recovery time: 62ns, кількість в упаковці: 1 шт.
Інші пропозиції IXTA18P10T
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXTA18P10T | Виробник : IXYS | Description: MOSFET P-CH 100V 18A TO-263 |
товар відсутній |
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IXTA18P10T | Виробник : IXYS | MOSFET 18 Amps 100V 0.12 Rds |
товар відсутній |
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IXTA18P10T | Виробник : IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO263 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -18A Power dissipation: 83W Case: TO263 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 39nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 62ns |
товар відсутній |